advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower gate charge r ds(on) 2 fast switching characteristic i d 590ma rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 ma i d @t a =70 ma i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice parameter operating junction temperature range continuous drain current, v gs @ 10v 3 470 pulsed drain current 1 1.6 total power dissipation storage temperature range -55 to 150 thermal data gate-source voltage + 20 continuous drain current, v gs @ 10v 3 590 parameter rating drain-source voltage 60 AP2342GK-HF 1.38 -55 to 150 201111251 halogen-free product 1 d d s g sot-223 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra lo w on-resistance and cost-effectiveness. the sot-223 package is designed for suface mount application, large r heatsink than so-8 and sot package. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =500ma - - 2 v gs =4.5v, i d =200ma - - 3 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance 2 v ds =10v, i d =500ma - 0.6 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =500ma - 1 1.6 nc q gs gate-source charge v ds =30v - 0.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 0.3 - nc t d(on) turn-on delay time v ds =30v - 11 - ns t r rise time i d =500ma - 8 - ns t d(off) turn-off delay time r g =3.3 -55- ns t f fall time v gs =10v - 30 - ns c iss input capacitance v gs =0v - 33 53 pf c oss output capacitance v ds =25v - 8 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.5a, v gs =0v - - 1.3 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP2342GK-HF 3.surface mounted on 1 in 2 copper pad of fr4 board ; 180 /w when mounted on min. copper pad. 2
AP2342GK-HF fig 1. typical output characteristics fig 2. typical output characteristics 20 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 0.4 0.8 1.2 1.6 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6 .0v 5.0 v v g = 4 .0v 0 0.4 0.8 1.2 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 60v 5.0 v v g = 4 .0v 0.4 0.8 1.2 1.6 2 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 500m a v g =10v 1.4 1.5 1.6 1.7 1.8 1.9 2 246810 v gs , gate-to-source voltage (v) r ds(on) ( ) i d = 200m a t a =25 o c 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua
AP2342GK-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 2.4 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =0.5a v ds =30v v ds =48v 0 10 20 30 40 50 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 180 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 0.2 0.4 0.6 0.8 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) operation in this area limited by r ds(on) 0 0.2 0.4 0.6 0.8 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j =-40 o c
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